C‑AFM
高感度かつ非破壊的計測
フェムトアンペア（fA）オーダーの微小電流を検出。世界トップレベルの感度により、ゲート絶縁膜への電気的負荷を抑え、本来の故障メカニズムを維持したまま観察でき、ゲート絶縁膜信頼性フィジビリティ検証。
Fig. 1 Accurate characterization of fA level current
Schematic measurement circuit
Experimental parameters
• Sample: 5 nm thick SiO2 film thermally grown on n-type substrate
• Vacuum atmosphere: < 1×10-5 torr
• Cantilever probe: Pt coated Si probe
• VG = -Vsub
Fig. 2 I-V characteristics of 10 random locations
High accuracy
Current accuracy: ΔI/I = ± 33 %, within a thickness fluctuation ranging from 4.9 nm ~ 5.1 nm
High sensitivity
Imin = 20 fA
Local area
Aeff (contact area) ≈ 100 nm
Current accuracy: ΔI/I = ± 33 %, within a thickness fluctuation ranging from 4.9 nm ~ 5.1 nm
High sensitivity
Imin = 20 fA
Local area
Aeff (contact area) ≈ 100 nm